| PART |
Description |
Maker |
| WCR2512-10KFI WCR0402-10KFI WCR0201-10KFI WCR1210- |
50General Purpose Surface Mounted Resistors RESISTOR, 1 W, 1 %, 200 ppm, 10000 ohm, SURFACE MOUNT, 2512
50General Purpose Surface Mounted Resistors RESISTOR, 0.063 W, 1 %, 100 ppm, 10000 ohm, SURFACE MOUNT, 0402
50General Purpose Surface Mounted Resistors RESISTOR, 0.05 W, 1 %, 250 ppm, 10000 ohm, SURFACE MOUNT, 0201
50General Purpose Surface Mounted Resistors RESISTOR, 0.25 W, 1 %, 100 ppm, 10000 ohm, SURFACE MOUNT, 1210
|
Welwyn Components, Ltd.
|
| HY27SS08561M-FPCP HY27SS08561M-FCP |
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
|
Hynix Semiconductor, Inc.
|
| 0070.5021.B1 0070.9521.B1 0070.1181.B1 0070.1111.A |
11 - 95 VAC ・ 250 - 10000 A ・ 5 - 20 mm
|
Schurter Inc.
|
| BYX101GAMO |
0.4 A, 10000 V, SILICON, SIGNAL DIODE
|
NXP SEMICONDUCTORS
|
| NTD10 |
0.3 A, 10000 V, SILICON, SIGNAL DIODE
|
|
| NAND1282R4A2AN6T |
8M X 16 FLASH 1.8V PROM, 10000 ns, PDSO48
|
NUMONYX
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| UPA2520T1H-T2-AT |
10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
|
| M100FF5 |
10000 V rectifier 10-40 mA forward current,50 ns recovery time
|
Voltage Multipliers, Inc.
|
| 3549S-1AC-103B 3549H-1BD-103B |
PRECISION POT-7/8" 22MM DIA 10T WW RESISTOR, POTENTIOMETER, WIRE WOUND, 10 TURN(S), 2 W, 10000 ohm
PRECISION POT-7/8" 22MM DIA 10T WW RESISTOR, POTENTIOMETER, HYBRID, 10 TURN(S), 2 W, 10000 ohm
|
Bourns, Inc.
|
| ZFSC-2-10G |
Power Splitter/Combiner 2 Way-0 50楼? 2000 to 10000 MHz
|
Mini-Circuits
|
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